发明名称 |
SUBSTRATE PROCESSING METHOD |
摘要 |
A method for processing a substrate is provided to restrain defects due to collision of particles by setting a moving speed of a substrate less than an upper-limit value. A substrate(201) is installed in a vessel(210) at vacuum atmosphere. In the vessel, the substrate is moved in a predetermined relative speed with respect to the vessel such that a substrate process is performed. During the substrate process, an upper-limited value about the number of defects and concentration thereof is determined. The defects are generated on the substrate. The predetermined relative speed is set less than a relative speed of which the number of detects or the concentration thereof becomes an upper-limited value.
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申请公布号 |
KR20070001795(A) |
申请公布日期 |
2007.01.04 |
申请号 |
KR20060049215 |
申请日期 |
2006.06.01 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KANEKO TOSHIO;NISHIWAKI TORU |
分类号 |
H01L21/265;H01L21/425 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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