发明名称 SUBSTRATE PROCESSING METHOD
摘要 A method for processing a substrate is provided to restrain defects due to collision of particles by setting a moving speed of a substrate less than an upper-limit value. A substrate(201) is installed in a vessel(210) at vacuum atmosphere. In the vessel, the substrate is moved in a predetermined relative speed with respect to the vessel such that a substrate process is performed. During the substrate process, an upper-limited value about the number of defects and concentration thereof is determined. The defects are generated on the substrate. The predetermined relative speed is set less than a relative speed of which the number of detects or the concentration thereof becomes an upper-limited value.
申请公布号 KR20070001795(A) 申请公布日期 2007.01.04
申请号 KR20060049215 申请日期 2006.06.01
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KANEKO TOSHIO;NISHIWAKI TORU
分类号 H01L21/265;H01L21/425 主分类号 H01L21/265
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