Non-volatile memory device having a floating gate and method of forming the same

摘要

A nonvolatile memory device includes a device isolating layer disposed at a substrate to define an active region and a floating gate disposed on the active region. The floating gate includes a flat portion and a pair of wall portions. The pair of wall portions extend upward from both edges of the flat portion adjacent to the device isolating layer and face each other. The nonvolatile memory device further includes a tunnel insulating layer interposed between the floating gate and the active region. Moreover, the wall portions and the flat portion are formed of a single layer, and the thickness of the flat portion is larger than a width of the wall portions.