发明名称 Test apparatus, and method of manufacturing semiconductor memory
摘要 A test apparatus includes a pattern memory for storing a test pattern to be inputted to a memory-under-test, an address generating section for sequentially outputting addresses of the memory-under-test into which the test pattern is to be written, a pointer section for sequentially pointing each address of the pattern memory to cause the pattern memory to output the test pattern in synchronism with the address of the memory-under-test outputted out of the address generating section, a bad block memory for storing an address of a bad block of the memory-under-test in advance and a pointer control section for causing the address generating section to output a next address of the memory-under-test while holding the address of the pattern memory outputted out of the pointer section when the address of the memory-under-test generated by the address generating section coincides with any one of addresses stored in the bad block memory.
申请公布号 US2007005286(A1) 申请公布日期 2007.01.04
申请号 US20060477245 申请日期 2006.06.29
申请人 ADVANTEST CORPORATION 发明人 SATO SHINYA
分类号 G01R27/28 主分类号 G01R27/28
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