METHOD FOR PREPARING LIGHT EMITTING DIODE DEVICE HAVING HEAT DISSIPATION RATE ENHANCEMENT

摘要

Disclosed are a method for fabricating a light emitting diode device having a light emitting diode section grown on a sapphire substrate, a boded structure fabricated through the method, a unit chip separated from the bonded structure, and a light emitting diode device having the unit chip. The method includes the steps of (a) bonding the light emitting diode section grown on a first surface of the sapphire substrate to a first surface of a first substrate by means of a first binder; (b) bonding a second surface of the first substrate to a first surface of a second substrate by means of a second binder; (c) removing the second substrate from a bonded structure obtained as a result of step (b) after polishing a second surface of the sapphire substrate; (d) separating the bonded structure into unit chips after the second substrate has been removed from the bonded structure; and (e) bonding the second surface of the polished sapphire substrate provided in each unit chip to a lead frame, and then removing the first substrate. In the manufacture of high-output light emitting diodes, such a method can remarkably improve heat dissipation efficiency by intentionally reducing the thickness of the sapphire substrate.