发明名称 Superjunction semiconductor device
摘要 A superjunction semiconductor device includes an edge p pillar, an active region, and a termination region. The edge p pillar has a rectangular ring shape with rounded corners surrounding the active region. The active region includes an active n region and active p pillars having vertical stripe shapes disposed at regular intervals in the active n region. The top and bottom ends of the active p pillars are separated from the edge p pillar. The termination region includes termination n pillars and termination p pillars alternately arranged around the edge p pillar. Surplus p charges that are not used to balance the quantity of p charges and the quantity of n charges among p charges included in the upper and lower parts of the edge p pillar are eliminated or n charges are supplemented to balance the quantity of p charges and the quantity of n charges.
申请公布号 US2007001230(A1) 申请公布日期 2007.01.04
申请号 US20050172455 申请日期 2005.06.29
申请人 LEE JAE-GIL;JUNG JIN-YOUNG;JANG HO-CHEOL 发明人 LEE JAE-GIL;JUNG JIN-YOUNG;JANG HO-CHEOL
分类号 H01L29/76 主分类号 H01L29/76
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