发明名称 METHOD OF FORMING THROUGH-SILICON VIAS WITH STRESS BUFFER COLLARS AND RESULTING DEVICES
摘要 <p>A method of forming a via (230) having a stress buffer collar (250) , wherein the stress buffer collar can absorb stress resulting from a mismatch in the coefficients of thermal expansion of the surrounding materials. Other embodiments are described and claimed.</p>
申请公布号 WO2007002870(A1) 申请公布日期 2007.01.04
申请号 WO2006US25471 申请日期 2006.06.28
申请人 INTEL CORPORATION;ARANA, LEONEL;NATEKAR, DEVENDRA;NEWMAN, MICHAEL;GURUMURTHY, CHARAN 发明人 ARANA, LEONEL;NATEKAR, DEVENDRA;NEWMAN, MICHAEL;GURUMURTHY, CHARAN
分类号 H01L21/768 主分类号 H01L21/768
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