发明名称 |
Device for heat-treating III-V semiconductor wafers comprises a wafer carrier with dimensions such that a cover is formed close to the wafer surface |
摘要 |
<p>Device for heat-treating III-V semiconductor wafers comprises a wafer carrier with dimensions such that a cover is formed no more than 2 mm above the wafer surface after a wafer has been placed in the carrier. Independent claims are also included for: (1) heat-treating III-V semiconductor wafers divided from as-grown monocrystals with a diameter of at least 100 mm by heat-treating the wafers in a state such that the surface to be treated is either covered directly with a gas-permeable or porous material or is covered with a material (gas-permeable or porous or not) with a spacing of 0-2 mm; (2) heat-treating III-V semiconductor wafers divided from as-grown monocrystals with a diameter of at least 100 mm by heat-treating the wafers in quartz-free heat treatment apparatus comprising at least one wafer carrier after cleaning and etching and before edge-rounding; (3) gallium arsenide semiconductor crystal wafer with a diameter of at least 100 mm and a dislocation density of no more than 10 4> cm -> 2>, where the characteristic breaking strength, corresponding to a 63.2% failure rate (Weibull distribution), is at least 25% greater than that of semi-insulating gallium arsenide (SI GaAs) wafers made from crystal-tempered material; (4) gallium arsenide semiconductor crystal wafer with a diameter of at least 100 mm and a dislocation density of no more than 10 4> cm -> 2>, where the characteristic breaking strength, corresponding to a 63.2% failure rate (Weibull distribution), is more than 1900 MPa.</p> |
申请公布号 |
DE102005030851(A1) |
申请公布日期 |
2007.01.04 |
申请号 |
DE20051030851 |
申请日期 |
2005.07.01 |
申请人 |
FREIBERGER COMPOUND MATERIALS GMBH |
发明人 |
JURISCH, MANFRED;EICHLER, STEFAN;BUENGER, THOMAS;WEINERT, BERNDT;BOERNER, FRANK |
分类号 |
C30B33/02;C30B29/40 |
主分类号 |
C30B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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