METHOD FOR FORMING GATE OF SEMICONDUCTOR DEVICE

摘要

A method for fabricating a gate in a semiconductor device is provided to prevent boron penetration and to improve throughput by using B18H22 as an ion implantation impurity. A silicon substrate(11) having an isolation layer(12) for defining an active region is prepared. A gate oxide layer(13) is formed on the silicon substrate. A gate poly silicon layer is formed on the gate oxide layer. B18H22 ion is implanted into the gate poly silicon layer to form a p+ poly silicon layer(14'). O2 plasma is processed on the resultant structure of the silicon substrate to remove hydrogen within the p+ poly silicon layer. The p+ poly silicon layer and the gate oxide layer are etched. The poly silicon layer is formed with a thickness of 300~1500 angstroms.