| 摘要 |
A DFV(Development Free Vapor) apparatus for a wafer bevel is provided to prevent damage of wafer and to reduce defects of arcking by using a semicircle of doughnut shape. An upper electrode(110) is installed in a chamber. First and second gas injecting holes(113a,114a) are punched on the upper electrode. A main etching gas and an inert gas supplied through the inside of the chamber are respectively and independently injected through the first and the second gas injecting holes. A gas distribution plat(111) are installed on a lower portion of the upper electrode. First and second gas distribution pipes(113b,114b) are formed in the gas distribution plat. The first and the second gas distribution pipes are connected to the first and the second gas injecting holes to supply the main etching gas and the inert gas injected through the first and the second gas injecting holes to the inside of the chamber. A chuck(112) is installed on a lower side of the inside of the chamber in a direction opposite to the gas distribution plat. A wafer(120) is placed on the chuck. A lower electrode(117) is installed to a direction opposite to the upper electrode to be separated from the chuck by an isolation ring(116). A semicircle(130) of doughnut shape is installed on a plasma generating region between the upper electrode and the lower electrode to surround the wafer. Plural through-holes are punched on the semicircle.
|
