发明名称 |
Method for adjusting dimensions of photomask features |
摘要 |
A method for adjusting one or more dimensions of a photomask subsequent to etching of a defective pattern in the chrome-containing layer thereof is provided. The method includes subjecting the chrome-containing layer of a photomask to a wet etch process utilizing a solution comprising deionized water and ozone. The length of exposure is directly proportional to the degree of adjustment desired. Accordingly, the method of the present invention provides a way in which dimensions of a photomask may be adjusted by a small amount (e.g., a few angstroms) or more severely adjusted, for example, by 20-30 nanometers or more.
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申请公布号 |
US2007003844(A1) |
申请公布日期 |
2007.01.04 |
申请号 |
US20060516234 |
申请日期 |
2006.09.06 |
申请人 |
RASMUSSEN ROBERT T;BAUGH JIM R |
发明人 |
RASMUSSEN ROBERT T.;BAUGH JIM R. |
分类号 |
G03C5/00;B44C1/22;C03C15/00;C03C17/00;C03C17/34;C03C17/36;C03C25/68;C23F1/00;C25F3/00;G03C3/02;G03F1/00;G03F1/08;G03F1/14;G03F9/00;G06F17/50 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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