发明名称 Enhancement of membrane characteristics in semiconductor device with membrane
摘要 A semiconductor device having a membrane includes a semiconductor substrate, which has an active surface, and a membrane. A cavity is located between the active surface and the membrane and hermetically sealed. The membrane includes a first film, which has a through hole that extends through the first film, and a second film, which has been formed by reflowing a reflow layer made of a material that becomes viscous and reflows when heated. The through hole has been plugged by the second film.
申请公布号 US7157781(B2) 申请公布日期 2007.01.02
申请号 US20030425663 申请日期 2003.04.30
申请人 DENSO CORPORATION 发明人 KAWASAKI EISHI;YOKURA HISANORI;SUGIURA KAZUHIKO
分类号 H01L29/84;B81B3/00;G01L9/00;G01P15/08;G01P15/125;H01L21/00 主分类号 H01L29/84
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