发明名称 MOS charge pump
摘要 A passive charge pump includes a plurality of stages or a single stage, with each stage including only two MOS transistors. Both of the transistors are configured in a transcapacitance configuration, and both transistors are primarily in the accumulation mode during operation. Embodiments of the charge pump rely entirely on the MOS capacitance and its embedded diode features to perform the necessary charge accumulation and transfer process necessary for voltage multiplication at the output and do not require any collateral capacitors and diodes. The charge pump may be embodied in an MOS technology, nMOS, pMOS, or CMOS.
申请公布号 US7157961(B2) 申请公布日期 2007.01.02
申请号 US20050047668 申请日期 2005.02.02
申请人 MISSISSIPPI STATE UNIVERSITY 发明人 WINTON RAYMOND S.
分类号 G05F1/10;G05F3/02;H02M3/07 主分类号 G05F1/10
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