CMOS IMAGE SENSOR, AND METHOD FOR FABRICATING THE SAME

摘要

A CMOS image sensor, and a method for fabricating the same are provided to prevent loss of incident rays by forming a passivation layer without forming a step. A plurality of metal lines(204) are formed on a substrate(201). A planarization layer(203) is formed on the substrate in order to planarize the substrate including the metal lines. A passivation layer(205) is formed on the planarization layer without forming a step thereon. The planarization layer is buried between adjacent metal lines patterns in order to be formed equally to the metal line patterns. The metal lines are connected with a lower metal line by a contact plug.