| 摘要 |
A manufacturing method of a fuse box is provided to form constantly a thickness of an insulating layer formed on a fuse by depositing doubly insulating layers having different etching ratios. A fuse(102) is formed on an upper surface of a first interlayer dielectric(101) of a semiconductor substrate. A second and a third interlayer dielectrics(103,104) are formed on the fuse. A metal line(106) is connected with an upper part of the fuse and the semiconductor substrate. A fourth interlayer dielectric(108) is formed thereon. A second metal line(109) is connected with the first metal line through the fourth interlayer dielectric. A passivation layer(110) is deposited thereon. The interlayer dielectric of a fuse open region(112) is exposed by removing the passivation layer and a part of the fourth interlayer dielectric. The third interlayer dielectric and the second interlayer dielectric are etched by performing a second etch process.
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