| 发明名称 |
Semiconductor device and process of production of same |
| 摘要 |
A semiconductor device comprising: a first insulating film formed on a semiconductor substrate; a semiconductor layer at least a part of which is formed on the first insulating film; a second insulating film comprising a non-doped silicon oxide film and formed on the semiconductor layer; a third insulating film comprising a silicon oxide film containing at least phosphorus formed on the second insulating film; and a fourth insulating film comprising a non-doped silicon oxide film formed on the third insulating film.
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| 申请公布号 |
US7157320(B2) |
申请公布日期 |
2007.01.02 |
| 申请号 |
US20040816307 |
申请日期 |
2004.04.01 |
| 申请人 |
SONY CORPORATION |
发明人 |
SASAKI YUJI |
| 分类号 |
H01L21/28;H01L21/338;H01L21/283;H01L21/316;H01L21/331;H01L21/337;H01L21/822;H01L21/8222;H01L21/8238;H01L27/04;H01L29/417;H01L29/73;H01L29/732 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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