发明名称 |
Non-volatile flash semiconductor memory and fabrication method |
摘要 |
In a semiconductor memory, a plurality of FinFET arrangements with trapping layers or floating gate electrodes as storage mediums are present on respective top sides of fins made from semiconductor material. The material of the gate electrodes is also present on two side walls of the fins, in order to form side wall transistors, and between the gate electrodes forms parts of a word line belonging to the corresponding fin.
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申请公布号 |
US7157768(B2) |
申请公布日期 |
2007.01.02 |
申请号 |
US20040991345 |
申请日期 |
2004.11.09 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HOFMANN FRANZ;LANDGRAF ERHARD;ROSNER WOLFGANG;SPECHT MICHAEL;STAEDELE MARTIN |
分类号 |
H01L27/115;H01L21/28;H01L21/336;H01L21/8246;H01L21/8247;H01L21/84;H01L27/12;H01L29/786;H01L29/788 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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