Method for using a wet etch to manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same

摘要

The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing the semiconductor device, among other possible steps, forming a polysilicon gate electrode ( 250 ) over a substrate ( 210 ) and forming a protective layer ( 260 ) over the polysilicon gate electrode ( 250 ) to provide a capped polysilicon gate electrode ( 230 ). The method further includes forming a protective oxide ( 510 ) on a surface proximate the polysilicon gate electrode ( 250 ), and removing the protective oxide ( 510 ) using a wet etch, the wet etch not having a substantial impact on the protective layer ( 260 ).