发明名称 |
SP3 BONDING BORON NITRIDE THIN FILM HAVING SELF-FORMING SURFACE SHAPE BEING ADVANTAGEOUS IN EXHIBITING PROPERTY OF EMITTING ELECTRIC FIELD ELECTRONS, METHOD FOR PREPARATION THEREOF AND USE THEREOF |
摘要 |
A method for preparing an sp3 bonding boron nitride film exhibits excellent electric field electron emission characteristics which comprises introducing a reaction gas containing a boron source and a nitrogen source into a reaction vessel, adjusting the temperature of a substrate to the range of room temperature to 1300‹C, and irradiating the substrate with an ultraviolet light with or without the generation of a plasma, to thereby form a surface structure excellent in electric field electron emission characteristics on the substrate by a reaction from the vapor phase in a self-forming manner. The film prepared by the above method is a material which, in addition to the above characteristics, has high resistance to electric field strength, can emit electrons with a great current density, and is free from the deterioration thereof. ® KIPO & WIPO 2007 |
申请公布号 |
KR20070000388(A) |
申请公布日期 |
2007.01.02 |
申请号 |
KR20067004101 |
申请日期 |
2004.08.27 |
申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
KOMATSU SHOJIRO;MORIYOSHI YUSUKE;SHIMIZU YOSHIKI;OKADA KATSUYUKI |
分类号 |
C01B21/064;C23C16/38;C23C16/34;C23C16/48;H01J1/304;H01J9/02 |
主分类号 |
C01B21/064 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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