发明名称 Ozone vapor clean method
摘要 A method for cleaning and forming an oxide film on a surface, particularly a silicon surface. The surface is initially cleaned and then exposed to ozone vapor, which forms the oxide film on the surface. The method is particularly useful for forming a pre-liner oxide film on trench surfaces in the fabrication of STI (shallow trench isolation) structures.
申请公布号 US7157351(B2) 申请公布日期 2007.01.02
申请号 US20040850747 申请日期 2004.05.20
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHENG CHUNG-LONG;THEI KONG-BENG;KAO JUNG-HUI
分类号 H01L21/76;H01L21/306;H01L21/31;H01L21/316;H01L21/469;H01L21/762 主分类号 H01L21/76
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