发明名称 |
Ozone vapor clean method |
摘要 |
A method for cleaning and forming an oxide film on a surface, particularly a silicon surface. The surface is initially cleaned and then exposed to ozone vapor, which forms the oxide film on the surface. The method is particularly useful for forming a pre-liner oxide film on trench surfaces in the fabrication of STI (shallow trench isolation) structures.
|
申请公布号 |
US7157351(B2) |
申请公布日期 |
2007.01.02 |
申请号 |
US20040850747 |
申请日期 |
2004.05.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHENG CHUNG-LONG;THEI KONG-BENG;KAO JUNG-HUI |
分类号 |
H01L21/76;H01L21/306;H01L21/31;H01L21/316;H01L21/469;H01L21/762 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|