发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device includes a highly reliable multi-level interconnect structure having a low effective dielectric constant and which can be easily manufactured with a relatively inexpensive process, and a method for manufacturing the semiconductor device. The semiconductor device includes a lower-level interconnect and an upper-level interconnect, each surrounded by a barrier layer, and a via plug surrounded by a barrier layer and electrically connecting the lower-level interconnect and the upper-level interconnect.
申请公布号 US7157370(B2) 申请公布日期 2007.01.02
申请号 US20040893244 申请日期 2004.07.19
申请人 EBARA CORPORATION 发明人 INOUE HIROAKI;SUSAKI AKIRA
分类号 C23C18/16;H01L21/4763;C25D7/12;H01L21/288;H01L21/768;H01L23/522;H01L23/532 主分类号 C23C18/16
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