SEMICONDUCTOR ELEMENT

摘要

In a semiconductor element, an n-type silicon carbide layer arranged on a silicon carbide substrate has an upper surface off-cut in the (11-20) direction from the (0001) surface. A gate electrode and a source electrode are arranged so that current flowing in the off-cut direction is dominant in the channel region. After forming a gate insulation film, thermal treatment is performed in an atmosphere containing an element of group V. By this, the interface state density is lowered at the interface between the silicon carbide layer and the gate insulation film and accordingly, the electron movement is increased in the off-cut direction A as compared to the direction vertical to the off-cut direction A. ® KIPO & WIPO 2007