发明名称 FLASH EEPROM SYSTEM WITH SIMULTANEOUS MULTIPLE DATA SECTOR PROGRAMMING AND STORAGE OF PHYSICAL BLOCK CHARACTERISTICS IN OTHER DESIGNATED BLOCKS
摘要 A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. One feature is the storage in separate blocks of the characteristics of a large number of blocks of cells in which user data is stored. These characteristics for user data blocks being accessed may, during operation of the memory system by its controller, be stored in a random access memory for ease of access and updating. A typical form of the memory system is as a card that is removably connectable with a host system but may alternatively be implemented in a memory embedded in a host system. The memory cells may be operated with multiple states in order to store more than one bit of data per cell.
申请公布号 KR100663738(B1) 申请公布日期 2007.01.02
申请号 KR20027010577 申请日期 2001.02.13
申请人 发明人
分类号 G11C16/00;G06F3/06;G06F12/00;G06F12/02;G11C;G11C11/34;G11C16/04;G11C16/08 主分类号 G11C16/00
代理机构 代理人
主权项
地址