发明名称 METHOD OF FILLING A OPENING AND METHOD OF FORMING A TRENCH ISOLATION STRUCTURE USING THE SAME
摘要 A method of filling an opening and a method of forming a trench isolation structure using the same are provided to increase density of a filler of the opening by using an expansible member formed on an inner surface of the opening. An opening(104) is formed by etching partially a substrate(100). An expansible member(106b) is formed on a sidewall of the opening. The expansible member is filled with a plurality of fillers(108a,108b). The volume of the expansible member is enlarged to increase the density of the fillers formed within the opening. The expansible member is formed with polysilicon. The volume of the expansible member is enlarged by performing a thermal oxidation process.
申请公布号 KR20070000062(A) 申请公布日期 2007.01.02
申请号 KR20050055499 申请日期 2005.06.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 RHA, SANG HO;NA, KYU TAE;GOO, JU SEON;KIM, HONG GUN
分类号 H01L21/76 主分类号 H01L21/76
代理机构 代理人
主权项
地址
您可能感兴趣的专利