发明名称 Low polarization gain dependent semiconductor optical amplifier with variable residual cladding layer thickness
摘要 A semiconductor optical amplifier (SOA) has an overall gain that is substantially polarization independent, i.e., less than 1 dB difference between transverse electric (TE) and transverse magnetic (TM) gain. The SOA includes a residual cladding layer having different thicknesses over different portions of the gain section. Over a first portion of the gain section, the residual cladding layer is thinner than over a second portion of the gain section. This results in the first portion providing more gain to optical energy having a TE polarization state than optical energy having a TM polarization state. In the second portion of the gain section, however, more gain is provided to optical energy having a TM polarization state than energy having a TE polarization state. The resulting gain differences can be designed to offset one another so that the output has a gain that is substantially polarization independent.
申请公布号 US7158291(B2) 申请公布日期 2007.01.02
申请号 US20040767651 申请日期 2004.01.29
申请人 QUANTUM PHOTONICS, INC. 发明人 SAINI SIMARJEET S.;HEIM PETER J. S.;MERRITT SCOTT A.;DAGENAIS MARIO
分类号 H01S4/00;H01S3/00;H01S5/223;H01S5/32;H01S5/50;H04B10/12 主分类号 H01S4/00
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