发明名称 |
Methods of forming halo regions in NMOS transistors |
摘要 |
Disclosed are methods of forming a halo region in n-channel type MOS (NMOS) transistors. In one example, the method includes forming, on a channel region of a semiconductor substrate, a structure having a gate insulation film pattern and a gate conductive film pattern stacked sequentially; forming an ion implantation buffer film on an exposed surface of the semiconductor substrate and the gate conductive film pattern; performing a first ion implantation process for injecting fluorine ions into the semiconductor substrate; performing a second ion implantation process for implanting p-type halo ions into the semiconductor substrate; performing a third ion implantation process for implanting n-type impurity ions into the semiconductor substrate; and diffusing the p-type halo ions and the n-type impurity ions using a thermal process.
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申请公布号 |
US7157357(B2) |
申请公布日期 |
2007.01.02 |
申请号 |
US20040998868 |
申请日期 |
2004.11.29 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
KIM HAK-DONG |
分类号 |
H01L21/425;H01L21/265;H01L21/336;H01L29/10;H01L29/78 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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