发明名称 |
Use of non-lithographic shrink techniques for fabrication/making of imprints masks |
摘要 |
The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate improved critical dimension (CD) control and the reduction of line-edge roughness (LER) during pattern line formation in an imprint mask. One aspect of the invention provides for forming features having CDs that are larger than ultimately desired in a mask resist. Upon application of a non-lithographic shrink technique, LER is mitigated and CD is reduced to within a desired target tolerance.
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申请公布号 |
US7159205(B1) |
申请公布日期 |
2007.01.02 |
申请号 |
US20040838830 |
申请日期 |
2004.05.04 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
AMBLARD GILLES;SINGH BHANWAR;PHAN KHOI A. |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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