METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to suppress a boron permeation effect in a manufacturing process by implanting ions into a surface of an active region of a PMOS transistor. An isolation layer(2) is formed on a silicon substrate(1) in order to isolate an active region of a PMOS transistor. Nitrogen ions are implanted into a surface of the active region of the PMOS transistor. Oxygen ions are implanted into the surface of the active region of the PMOS transistor. An annealing process is performed on the active region of the PMOS transistor. A gate oxide layer(4) is formed on the active region of the PMOS transistor.