| 摘要 |
A page buffer of a flash memory device is provided to prevent a fail state during a program and copyback operation in advance, regardless of a pass signal generating operation when a redundancy cell is replaced due to '0' stuck fail generated during a program verify operation, by connecting a detection signal control part between a latch of a main register and a latch of a cache register. A verify signal supply part(120) is connected to even and odd bit lines of a memory cell array, and supplies a verify signal to the even and odd bit lines of the memory cell array by a discharge signal. A bit line selection part(130) is connected between the verify signal supply part and a sensing node, and connects the bit line and the sensing node by a bit line selection signal. A main register(150) temporarily storing data is connected to the sensing node and an input/output port. A cache register(160) temporarily storing data is connected to the sensing node and the input/output port in parallel with the main register. A detection signal control part(170) is connected between the main register and the cache register, and controls the generation of a detection signal during a verify operation.
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