A CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

A capacitor of a semiconductor device and a method for forming the same are provided to secure a high dielectric constant characteristic and improved leakage current characteristic by using a (TiO2)1-x(Ta2O5)x layer as a dielectric layer. A lower electrode(12) is formed on an upper surface of a substrate(10). A first dielectric layer(16) is formed on an upper surface of the lower electrode. The first dielectric layer is formed with (TiO2)1-x(Ta2O5)x where x is 0.05 to 0.20. An upper electrode(20) is formed on an upper surface of the first dielectric layer. A second dielectric layer(14) is formed between the lower electrode and the first dielectric layer. The second dielectric layer is formed with Al2O3. A third dielectric layer(18) is formed between the first dielectric layer and the upper electrode. The third dielectric layer is formed with Al2O3.