METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to obtain a stable well doping profile by forming an SSR(Super Steep Retrograded) well with a rapid temperature process. A substrate(21) including a screen oxide layer(23) is provided. An impurity dopant is implanted into the inside of the substrate. The impurity dopant implanted into the inside of the substrate is diffused to a predetermined region by performing a rapid temperature process(27). The rapid temperature process is performed by using a lamp having the same wavelength band as a wavelength band of a light absorbing rate of the substrate.