| 发明名称 |
Method for fabricating capacitor device |
| 摘要 |
After a capacitor device including a lower electrode, a capacitor dielectric film made from a ferroelectric film and an upper electrode is formed on a substrate, an insulating film covering the capacitor device is formed. Subsequently, the capacitor device covered with the insulating film is annealed for crystallizing the ferroelectric film.
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| 申请公布号 |
US7157348(B2) |
申请公布日期 |
2007.01.02 |
| 申请号 |
US20030341252 |
申请日期 |
2003.01.14 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MIKAWA TAKUMI;JUDAI YUJI;NOMA ATSUSHI |
| 分类号 |
H01L21/20;H01L27/105;H01L21/02;H01L21/314;H01L21/8246 |
主分类号 |
H01L21/20 |
| 代理机构 |
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