发明名称 APPARATUS FOR PLASMA PROCESSING
摘要 A plasma processing apparatus is provided to prevent generation of particles from an inner wall of a plasma chamber by controlling the pressure of the plasma chamber. A plasma chamber(100) is used for generating plasma. A process chamber(300) is connected with the plasma chamber in order to perform a process by using the plasma. A connective member(200) is used for connecting the plasma chamber with the process chamber. A pressure control unit(400) is installed at the connective member in order to control the pressure of the plasma chamber. The connective member includes a path in order to transfer the plasma to the process chamber. The pressure control unit controls the pressure of the plasma chamber by controlling a size of the path.
申请公布号 KR20070000295(A) 申请公布日期 2007.01.02
申请号 KR20050055917 申请日期 2005.06.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, BONG SUN
分类号 H01L21/3065 主分类号 H01L21/3065
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