发明名称 |
Method for producing ultra-thin semiconductor device |
摘要 |
A method for producing an ultra-thin semiconductor chip and an ultra-thin back-illuminated solid-state image pickup device utilizing a semiconductor layer formed on a support substrate via an insulating layer to improve separation performance of a semiconductor layer from a support substrate and thereby improve the productivity and quality. The method uses two porous peeling layers on opposite sides of a substrate to produce an ultra-thin substrate.
|
申请公布号 |
US7157352(B2) |
申请公布日期 |
2007.01.02 |
申请号 |
US20030680548 |
申请日期 |
2003.10.07 |
申请人 |
SONY CORPORATION |
发明人 |
YAMANAKA HIDEO |
分类号 |
H01L21/30;H01L27/14;H01L21/00;H01L21/46;H01L23/00;H01L27/146;H01L27/148 |
主分类号 |
H01L21/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|