| 摘要 |
There is provided memory control device and memory control method, which can prevent wiring complication by many crossing wirings, and reduction of yield and quality. When a memory control device CC 1 selects a memory chip CC 2 , an internal circuit of a select circuit 27 is changed by a switch signal SWS 2 . In this case, the changeover is made so that a select signal S 2 outputted from an internal circuit 40 is inputted to a predetermined memory terminal of the memory chip CC 2 . The select signal S 2 is inputted to the corresponding predetermined memory terminal of the memory chip CC 2 , and thereby, the memory chip CC 2 is activated, and set to a state capable of inputting and outputting control signals 21 to 25 . The control signals 21 to 25 are assigned to control terminals P 21 to P 27 after being hanged by the select circuit 27 in signal sequence corresponding to terminal array sequence of memory terminals 21 a to 27 a of the memory chip CC 2.
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