| 摘要 |
Disclosed is a semiconductor device having a sealed structure which enables to highly accurately detect a defect occurred in a protective film. Also disclosed is a method for manufacturing such a semiconductor device. A semiconductor device (1) comprises a substrate (10), a semiconductor element (14) formed on the substrate (10), and a protective film (17) sealing the semiconductor element (14). The semiconductor device further has a first conductive layer (16) which is in contact with the back surface of the protective film (17) and a second conductive layer (18) which is in contact with the front surface of the protective film (17). ® KIPO & WIPO 2007 |
