发明名称 |
Fabrication of thin film germanium infrared sensor by bonding to silicon wafer |
摘要 |
A method of fabricating a thin film germanium photodetector includes preparing a silicon substrate; fabricating a CMOS device on the silicon substrate; preparing a germanium substrate; preparing surfaces of each substrate for bonding; bonding the germanium substrate to the CMOS-bearing silicon substrate to form a bonded structure; removing a portion of the germanium substrate from the bonded structure; forming a PIN diode in the germanium substrate; removing a portion of the germanium layer by etching; and completing the germanium photo detector.
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申请公布号 |
US7157300(B2) |
申请公布日期 |
2007.01.02 |
申请号 |
US20040993533 |
申请日期 |
2004.11.19 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
LEE JONG-JAN;MAA JER-SHEN;HSU SHENG TENG;TWEET DOUGLAS J. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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