| 摘要 |
A thin film transistor substrate and a method for manufacturing the same are provided to prevent conductor layers for data and gate wires from being undercut, by sequentially depositing an aluminum layer and a chromium layer and then etching the chromium layer twice. A first metal layer is formed using one of Al, AlNd, Cu, and Ag each having a low electric resistance. A second metal layer is formed on the first metal layer using one of Cr, CrNx, Ti, Mo, and MoW each having heat and corrosion resistant properties. An etching mask is formed on the second metal layer. The second and first metal layers are sequentially etched using the etching mask, thereby forming a second metal pattern(22b) and a first metal pattern(22a). The second metal pattern is selectively re-etched using the etching mask, thereby forming a double-layered gate wire(22). In the gate wire, the final width of the second metal pattern is substantially equal to or smaller than the final width of the first metal pattern. |
