| 摘要 |
A method for manufacturing a fine pattern is provided to remove process errors due to topology of a first trench by using a planarization polymer in a second trench forming process of a DET(Double Exposure Technology) process. A first photoresist pattern is formed on an upper surface of an etching layer(10). A first trench is formed by etching the etching layer by using a first photoresist layer as a mask. The first photoresist layer is removed and a planarization polymer(13) is deposited on an entire surface thereof. A second photoresist pattern is formed on an upper surface of the planarization polymer. A second trench is formed by using the second photoresist pattern and the planarization polymer. The planarization polymer is removed therefrom.
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