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发明名称
规划多位元电荷补捉记忆胞元阵列方法
摘要
规划电压被施加到源极和漏极,以便在记忆胞元的沟道的一端处产生热空穴注入。通过将中间抑制电压施加到邻近的位元线来避免不期望的对相邻记忆胞元的规划。这通过将所有位元线预充电到抑制电压来完成,即或者通过接连地将抑制电压单独施加到每条位线、或者通过将较高和较低规划电压都施加到一半位元线并然后短路所有位元线以产生中间电压来完成。
申请公布号
TW200701230
申请公布日期
2007.01.01
申请号
TW095116791
申请日期
2006.05.11
申请人
奇梦达股份有限公司
发明人
托马士.勒尔;乔瑟夫.威勒
分类号
G11C11/56(2006.01);G11C16/10(2006.01)
主分类号
G11C11/56(2006.01)
代理机构
代理人
蔡清福
主权项
地址
德国
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