发明名称 |
IMPROVING CRITICAL DENSITY IN NB3SN SUPERCONDUCTING WIRE |
摘要 |
Critical current densities of internal tin wire to the range of 3000 A/mm2 at temperature of 4.2 K and in magnetic field 12 T are achieved by controlling the following parameters in a distributed barrier subelement design: wt% Sn in bronze; atomic Nb:Sn; local area ratio; reactable barrier; barrier thickness relative to the filament thickness; additions of a dopant such as Ti or Ta to the Nb3Sn; and the design for restacking and wire reduction to control the maximum filament diameter at the subsequent heat reaction stage. |
申请公布号 |
KR20060135824(A) |
申请公布日期 |
2006.12.29 |
申请号 |
KR20067019304 |
申请日期 |
2006.09.19 |
申请人 |
OXFORD SUPERCONDUCTING TECHNOLOGY |
发明人 |
FIELD MICHAEL;PARRELL JEFF;ZHANG YOUZHU;HONG, SEUNG OK |
分类号 |
H01B12/00 |
主分类号 |
H01B12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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