A LEADFRAME FOR FABRICATING SEMICONDUCTOR DEVICE USING SPOT PLATING

摘要

A leadframe for fabricating a semiconductor device using local plating is provided to avoid diffusion of copper while improving weldability in mounting a fabricated semiconductor chip package on a PCB by using a tin alloy layer. A base metal layer is made of a copper-based alloy(100) composed of copper or copper alloy. An underlying plating layer is formed on at least one surface of the base metal layer, made of a tin alloy(200). A silver plating layer(300) is locally formed on the underlying plating layer. The tin alloy of the underlying plating layer is composed of Sn of 20~80 weight percent and Cu of 20~80 weight percent.