| 摘要 |
A transflective thin film transistor substrate and a method of fabricating the substrate are provided to prevent an etchant from infiltrating into the boundary of an organic layer and a passivation layer by leaving a portion of the organic layer when the organic layer is developed. An insulating layer(122) and an organic layer(124) are sequentially formed to cover a thin film transistor formed on a substrate(102). The organic layer is patterned through an exposure process and a developing process to form a first organic layer having a first height and a second organic layer having a second height higher than the first height. A first dry etch process is performed to remove the second organic layer to selectively expose the insulating layer. A second dry etch process is carried out using the remaining organic layer as a mask to form a first contact hole(134) exposing a drain electrode(118) of the thin film transistor and a transmission hole(136) on a transmission region. A pixel electrode(126) connected to the thin film transistor through the first contact hole is formed. |
