发明名称 |
FLUORINE BARRIER LAYER BETWEEN CONDUCTOR AND INSULATOR FOR DEGRADATION PREVENTION |
摘要 |
METHOD OF IMPROVING THE RESISTANCE OF A METAL AGAINST DEGRADATION FROM EXPOSURE TO FLUORINE RELEASED FROM A FLUORINE- CONTAINING MATERIAL BY FORMING A FLUORINE-BARRIER LAYER BETWEEN THE INSULATOR MATERIAL AND THE METAL. THE INVENTION IS ESPECIALLY USEFUL IN IMPROVING CORROSION AND POISONING RESISTANCE OF METALLURGY, SUCH AS ALUMINUM METALLURGY, IN SEMICONDUCTOR STRUCTURES. THE INVENTION ALSO COVERS INTEGRATED CIRCUIT STRUCTURES MADE BY THIS METHOD. (FIG. 2F)
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申请公布号 |
MY127478(A) |
申请公布日期 |
2006.12.29 |
申请号 |
MY1997PI04675 |
申请日期 |
1997.10.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
EDWARD C COONEY;HYUN K LEE;THOMAS L MCDEVITT;ANTHONY K STAMPER |
分类号 |
H05K1/00;H01L21/285;H01L21/314;H01L21/316;H01L21/768;H01L23/522 |
主分类号 |
H05K1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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