ASYMMETRICAL RESIST SIDEWALL

摘要

A PHOTO MASK (22) AND A METHOD FOR USING THE PHOTO MASK TO MAKE ASYMMETRIC RESIST PATTERNS (17, 40) ARE PROVIDED. A WAFER HAVING A RESIST COATING THEREON IS EXPOSED USING THE MASK OF THE INVENTION UNDER SPECIALLY CONTROLLED DEFOCUS CONDITIONS TO PROVIDE THE ASYMMETRIC RESIST PATTERN PROFILE. THE MASK WHICH COMPRISES PHASE SHIFTER MEANS (24) ON ONE OR BOTH SIDES OF A LIGHT SHIELDING PATTERN (25) FORMING MATERIAL ON THE MASK PROVIDES LIGHT PASSING THROUGH THE MASK HAVING A DIFFERENT PHASE ON EACH SIDE OF THE LIGHT SHIELDING MATERIAL WHICH PRODUCES AN ASYMMETRIC RESIST PATTERN PROFILE. (FIG. 1 )