| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable BGA type semiconductor device. <P>SOLUTION: The semiconductor device comprises a pad electrode 4 formed on a semiconductor substrate 1 through insulating films 2 and 3, a plating layer 7 formed on the surface of the pad electrode 4, a conductive terminal 9 formed on the surface of the plating layer 7 and connected electrically with the pad electrode, and a first passivation film 5 formed to cover the insulating films 2 and 3 and the side end of the pad electrode 4 wherein the exposed portion 8 of the pad electrode 4 causing corrosion is covered by forming a second passivation film 10 to cover the first passivation film 5 and a part of the sidewall of the plating layer 7 and the conductive terminal 9. <P>COPYRIGHT: (C)2007,JPO&INPIT |
