LIGHT EMITTING DIODE, MANUFACTURING METHOD THEREOF, INTEGRATED LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF, GROWTH METHOD OF NITRIDE III-V COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT EMITTING DIODE BACKLIGHT, LIGHT EMITTING DIODE DISPLAY, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a light emitting diode of significantly high light emitting efficiency that can be manufactured by one-time epitaxial growth at a low cost, and a manufacturing method thereof.

SOLUTION: In a recess 11a formed on one main surface of a sapphire substrate 11, growth in a lateral direction is performed from a GaN layer 12, after burying the recess 11a by making the GaN layer 12 grow after passing through a state of a triangular cross section shape with its bottom face as a base. A light emitting diode structure is formed on the GaN layer 12 by growing a GaN based semiconductor layer including an active layer on the GaN layer 12. By using the GaN based light emitting diode, a light emitting diode backlight, etc. is manufactured.

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