| 摘要 |
PROBLEM TO BE SOLVED: To form a PZT film having (111) orientation by an MOCVD method. SOLUTION: A PTO nucleation layer having the (111) orientation is formed to a thickness of 5 nm or thicker, preferably 8 nm or thicker by a low oxygen partial pressure of less than 340 Pa by the MOCVD method, and the PZT film is formed on it by the MOCVD method. COPYRIGHT: (C)2007,JPO&INPIT
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