| 发明名称 |
Element fabrication substrate |
| 摘要 |
A substrate used for fabricating devices thereon includes an insulating film, and a monocrystal Ge thin layer formed on the insulating film in contact therewith, the monocrystal Ge thin layer having a thickness not more than 6 nm. The monocrystal Ge thin layer has a thickness not less than 2 nm and a compressive strain.
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| 申请公布号 |
US2006292835(A1) |
申请公布日期 |
2006.12.28 |
| 申请号 |
US20060510745 |
申请日期 |
2006.08.28 |
| 申请人 |
KABUSHIKI KAISHI TOSHIBA |
发明人 |
NAKAHARAI SHU;TEZUKA TSUTOMU;TAKAGI SHINICHI |
| 分类号 |
H01L21/20;H01L29/161;C30B3/00;C30B29/08;H01L21/205;H01L21/28;H01L21/324;H01L21/336;H01L21/762;H01L21/84;H01L27/12;H01L29/10;H01L29/78;H01L29/786 |
主分类号 |
H01L21/20 |
| 代理机构 |
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