发明名称 |
Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow |
摘要 |
A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in integrated circuits such as memory devices and microprocessor.
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申请公布号 |
US2006289993(A1) |
申请公布日期 |
2006.12.28 |
申请号 |
US20060511652 |
申请日期 |
2006.08.29 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L23/52;H01L21/285;H01L21/314;H01L21/316;H01L21/768;H01L23/48 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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