发明名称 |
Method for fabricating semiconductor device |
摘要 |
A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming a hard mask layer on the inter-layer insulation layer; etching the hard mask layer using a contact mask; and etching the inter-layer insulation layer using the hard mask layer as an etch barrier, thereby obtaining an opening wherein the etching of the hard mask layer and the etching of the inter-layer insulation layer are performed in one etch chamber.
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申请公布号 |
US2006292882(A1) |
申请公布日期 |
2006.12.28 |
申请号 |
US20050296346 |
申请日期 |
2005.12.08 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
NAM KI-WON;CHEONG JUNG-TAIK |
分类号 |
C23F1/00;H01L21/302;H01L21/461 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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